发明申请
- 专利标题： Semiconductor Devices and Methods of Manufacture Thereof
- 专利标题（中）： 半导体器件及其制造方法
-
申请号： US13861247申请日： 2013-04-11
-
公开(公告)号： US20140273366A1公开(公告)日： 2014-09-18
- 发明人: Cheng-Tung Lin , Teng-Chun Tsai , Li-Ting Wang , Chi-Yuan Chen , Kuo-Yin Lin , Wan-Chun Pan , Ming-Liang Yen , Ching-Wei Tsai , Kuo-Cheng Ching , Huicheng Chang , Chih-Hao Wang
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238 ; H01L27/092
摘要：
Semiconductor devices and methods of manufacture thereof are disclosed. In some embodiments, a method of manufacturing a semiconductor device includes providing a workpiece including an n-type field effect transistor (N-FET) region, a p-type FET (P-FET) region, and an insulating material disposed over the N-FET region and the P-FET region. The method includes patterning the insulating material to expose a portion of the N-FET region and a portion of the P-FET region, and forming an oxide layer over the exposed portion of the N-FET region and the exposed portion of the P-FET region. The oxide layer over the P-FET region is altered, and a metal layer is formed over a portion of the N-FET region and the P-FET region. The workpiece is annealed to form a metal-insulator-semiconductor (MIS) tunnel diode over the N-FET region and a silicide or germinide material over the P-FET region.
公开/授权文献
- US09508716B2 Methods of manufacturing a semiconductor device 公开/授权日：2016-11-29
信息查询
IPC分类:
