发明申请
- 专利标题: TANTALUM CAPACITOR
- 专利标题(中): TANTALUM电容
-
申请号: US13957396申请日: 2013-08-01
-
公开(公告)号: US20140254067A1公开(公告)日: 2014-09-11
- 发明人: Hee Dong Myung , Jeong Oh Hong , Hee Sung Choi , Kyoung Hwan Kim
- 申请人: Samsung Electro-Mechanics Co., Ltd.
- 申请人地址: KR Gyeonggi-do
- 专利权人: Samsung Electro-Mechanics Co., Ltd.
- 当前专利权人: Samsung Electro-Mechanics Co., Ltd.
- 当前专利权人地址: KR Gyeonggi-do
- 优先权: KR10-2013-0024943 20130308
- 主分类号: H01G9/012
- IPC分类号: H01G9/012 ; H01G9/032
摘要:
Disclosed herein is a tantalum capacitor capable of improving equivalent series resistance (ESR) characteristic by increasing the bond between a tantalum wire and a tantalum powder. The tantalum capacitor according to the present invention includes: a tantalum wire; a tantalum powder having embedded a front end of the tantalum wire and then being sintered; and a rough part formed on a surface of the tantalum wire so as to strengthen a bond between the tantalum wire and the tantalum powder.
信息查询