发明申请
- 专利标题： Low ESR Capacitor
- 专利标题（中）： 低ESR电容器
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申请号： US14183633申请日： 2014-02-19
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公开(公告)号： US20140233157A1公开(公告)日： 2014-08-21
- 发明人: Randolph S. Hahn , Jeffrey Poltorak , Brandon Summey , Antony P. Chacko , John T. Kinard , Philip M. Lessner
- 申请人： Randolph S. Hahn , Jeffrey Poltorak , Brandon Summey , Antony P. Chacko , John T. Kinard , Philip M. Lessner
- 主分类号： H01G9/15
- IPC分类号： H01G9/15
摘要：
An improved capacitor is provided wherein the improved capacitor has improved ESR. The capacitor has a fluted anode and an anode wire extending from the fluted anode. A dielectric is on the fluted anode. A conformal cathode is on the dielectric and a plated metal layer is on the carbon layer.
公开/授权文献
- US09959979B2 Low ESR capacitor 公开/授权日：2018-05-01
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