A method is provided for manufacturing a semiconductor device with a metal film resistor structure. The method includes providing an insulation layer on the semiconductor device. A lower copper interconnect is formed in the insulation layer. The method also includes forming a cap layer on the insulation layer and the lower copper interconnect and etching the cap layer based on a single photolithography mask to form a window exposing portion of the lower copper interconnect and portion of the insulation layer. Further, the method includes forming a metal film layer on the cap layer and inside the window such that exposed portion of the lower copper interconnect is connected with part of the metal film layer within the window. The method also includes performing a chemical mechanical polishing (CMP) process to form a metal film resistor based on the metal film layer. The metal film resistor is connected with the portion of the lower copper interconnect.