Invention Application
- Patent Title: METHOD OF PLASMA PROCESSING AND APPARATUSES USING THE METHOD
- Patent Title (中): 等离子体处理方法和使用该方法的装置
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Application No.: US14021335Application Date: 2013-09-09
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Publication No.: US20140193978A1Publication Date: 2014-07-10
- Inventor: Jung Hyun CHO , Hyung Joon KIM , Sang Jean JEON , Sang Heon LEE , Jeong Yun LEE , Kyung Yub JEON , Vasily PASHKOVSKIY
- Applicant: Jung Hyun CHO , Hyung Joon KIM , Sang Jean JEON , Sang Heon LEE , Jeong Yun LEE , Kyung Yub JEON , Vasily PASHKOVSKIY
- Priority: KR10-2013-0002807 20130110
- Main IPC: H01J37/32
- IPC: H01J37/32 ; H01L21/3065
Abstract:
A method of operating a plasma processing device includes outputting a first RF power having a first frequency and a first duty ratio, and outputting a second RF power having a second frequency higher than the first frequency and a second duty ratio smaller than the first duty ratio. The outputting of the first RF power and the outputting of the second RF power are synchronized with each other.
Public/Granted literature
- US09136094B2 Method of plasma processing and apparatuses using the method Public/Granted day:2015-09-15
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