Invention Application
US20140181427A1 Compound Memory Operations in a Logic Layer of a Stacked Memory 审中-公开
堆叠存储器的逻辑层中的复合存储器操作

Compound Memory Operations in a Logic Layer of a Stacked Memory
Abstract:
Some die-stacked memories will contain a logic layer in addition to one or more layers of DRAM (or other memory technology). This logic layer may be a discrete logic die or logic on a silicon interposer associated with a stack of memory dies. Additional circuitry/functionality is placed on the logic layer to implement functionality to perform various data movement and address calculation operations. This functionality would allow compound memory operations—a single request communicated to the memory that characterizes the accesses and movement of many data items. This eliminates the performance and power overheads associated with communicating address and control information on a fine-grain, per-data-item basis from a host processor (or other device) to the memory. This approach also provides better visibility of macro-level memory access patterns to the memory system and may enable additional optimizations in scheduling memory accesses.
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