Invention Application
- Patent Title: High Purity Carbon Nanotube, Process For Preparing The Same And Transparent Conductive Film Using The Same
- Patent Title (中): 高纯度碳纳米管,制备相同透明导电膜的方法
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Application No.: US13764981Application Date: 2013-02-12
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Publication No.: US20140056800A1Publication Date: 2014-02-27
- Inventor: Yoshihiro Kobayashi , Ryota Negishi , Shoji Koriyama , Shogo Agata , Kazuki Fujimoto , Michiharu Arifuku , Masaki Shinmoto , Masahiro Imaizumi , Noriko Kiyoyanagi
- Applicant: Nippon Kayaku Kabushiki Kaisha , Osaka University
- Applicant Address: JP Tokyo JP Osaka
- Assignee: NIPPON KAYAKU KABUSHIKI KAISHA,OSAKA UNIVERSITY
- Current Assignee: NIPPON KAYAKU KABUSHIKI KAISHA,OSAKA UNIVERSITY
- Current Assignee Address: JP Tokyo JP Osaka
- Priority: JP2012-027970 20120213
- Main IPC: C01B31/02
- IPC: C01B31/02
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Abstract:
ProblemTo provide a process for producing single-walled carbon nanotubes with which highly pure, high-quality single-walled carbon nanotubes can be produced with high efficiency, and to provide a transparent conductive film using the single-walled carbon nanotubes obtained by that production method.SolutionA process for producing single-walled carbon nanotubes by chemical vapor deposition (CVD), wherein particles of a nonmetallic material containing 500 ppm or lower of metallic impurities including metals and compounds thereof are used as growth nuclei; and after a growth gas is introduced into a furnace used for growing carbon nanotubes, the growth gas used in an initial stage of growth of carbon nanotubes and the growth gas used in a stage of growth of regular carbon nanotubes (stationary growth stage) thereafter are prepared to different compositions and different partial pressures.
Public/Granted literature
- US09440855B2 High purity carbon nanotube, process for preparing the same and transparent conductive film using the same Public/Granted day:2016-09-13
Information query