Invention Application
US20140021591A1 EMI SHIELDING SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR STACK STRUCTURE
审中-公开
EMI屏蔽半导体元件和半导体堆叠结构
- Patent Title: EMI SHIELDING SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR STACK STRUCTURE
- Patent Title (中): EMI屏蔽半导体元件和半导体堆叠结构
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Application No.: US13728112Application Date: 2012-12-27
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Publication No.: US20140021591A1Publication Date: 2014-01-23
- Inventor: Tse-Shih Sung , Wen-Jung Chiang , Hsin-Hung Lee
- Applicant: SILICONWARE PRECISION INDUSTRIES CO., LTD.
- Applicant Address: TW Taichung
- Assignee: SILICONWARE PRECISION INDUSTRIES CO., LTD.
- Current Assignee: SILICONWARE PRECISION INDUSTRIES CO., LTD.
- Current Assignee Address: TW Taichung
- Priority: TW101125981 20120719
- Main IPC: H01L23/60
- IPC: H01L23/60

Abstract:
A semiconductor element is provided, including: a substrate having a plurality of first conductive through holes and second conductive through holes formed therein; a redistribution layer formed on the substrate and having a plurality of conductive pads electrically connected to the first conductive through holes; and a metal layer formed on the redistribution layer and electrically connected to the second conductive through holes. The metal layer further has a plurality of openings for the conductive pads of the redistribution layer to be exposed from the openings without electrically connecting the first metal layer. As such, the metal layer and the second conductive through holes form a shielding structure that can prevent passage of electromagnetic waves into or out of the redistribution layer or side surfaces of the semiconductor element, thereby effectively shield electromagnetic interference.
Information query
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