发明申请
US20140008770A1 CARRIER SUBSTRATE AND METHOD FOR PRODUCING SEMICONDUCTOR CHIPS 有权
载体基板和制造半导体晶片的方法

CARRIER SUBSTRATE AND METHOD FOR PRODUCING SEMICONDUCTOR CHIPS
摘要:
A carrier substrate includes a first major face and a second major face opposite the first major face. A diode structure is formed between the first major face and the second major face, which diode structure electrically insulates the first major face from the second major face at least with regard to one polarity of an electrical voltage.
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