- 专利标题： METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE HAVING A LAMINATED STRUCTURE COMPRISING A BORON-DOPED SILICON GERMANIUM FILM AND A METAL FILM
-
申请号： US13974553申请日： 2013-08-23
-
公开(公告)号： US20130344674A1公开(公告)日： 2013-12-26
- 发明人: Nobuyuki SAKO
- 申请人： Nobuyuki SAKO
- 申请人地址： JP Tokyo
- 专利权人： ELPIDA MEMORY, INC.
- 当前专利权人： ELPIDA MEMORY, INC.
- 当前专利权人地址： JP Tokyo
- 优先权： JP2011-148255 20110704
- 主分类号： H01L49/02
- IPC分类号： H01L49/02
摘要：
A semiconductor device has memory cell portions and compensation capacitance portions on a single substrate. The memory cell portion and the compensation capacitance portion have mutually different planar surface areas. The memory cell portion and the compensation capacitance portion include capacitance plate electrodes of the same structure. The capacitance plate electrode has a laminated structure including a boron-doped silicon germanium film and a metal film.
公开/授权文献
信息查询
IPC分类:
