- 专利标题: SIMULTANEOUS WAFER BONDING AND INTERCONNECT JOINING
- 专利标题(中): 同时连接和互连
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申请号: US13939725申请日: 2013-07-11
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公开(公告)号: US20130341804A1公开(公告)日: 2013-12-26
- 发明人: Vage Oganesian , Belgacem Haba , Ilyas Mohammed , Piyush Savalia , Craig Mitchell
- 申请人: Tessera, Inc.
- 申请人地址: US CA San Jose
- 专利权人: Tessera, Inc.
- 当前专利权人: Tessera, Inc.
- 当前专利权人地址: US CA San Jose
- 主分类号: H01L25/00
- IPC分类号: H01L25/00
摘要:
Disclosed are a microelectronic assembly of two elements and a method of forming same. A microelectronic element includes a major surface, and a dielectric layer and at least one bond pad exposed at the major surface. The microelectronic element may contain a plurality of active circuit elements. A first metal layer is deposited overlying the at least one bond pad and the dielectric layer. A second element having a second metal layer deposited thereon is provided, and the first metal layer is joined with the second metal layer. The assembly may be severed along dicing lanes into individual units each including a chip.
公开/授权文献
- US08709913B2 Simultaneous wafer bonding and interconnect joining 公开/授权日:2014-04-29
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