Invention Application
US20130334631A1 MEMORY CELLS, SEMICONDUCTOR DEVICE STRUCTURES, MEMORY SYSTEMS, AND METHODS OF FABRICATION
有权
存储器单元，半导体器件结构，存储器系统和制造方法
- Patent Title: MEMORY CELLS, SEMICONDUCTOR DEVICE STRUCTURES, MEMORY SYSTEMS, AND METHODS OF FABRICATION
- Patent Title (中): 存储器单元，半导体器件结构，存储器系统和制造方法
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Application No.: US13527262Application Date: 2012-06-19
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Publication No.: US20130334631A1Publication Date: 2013-12-19
- Inventor: Wayne I. Kinney , Witold Kula , Stephen J. Kramer
- Applicant: Wayne I. Kinney , Witold Kula , Stephen J. Kramer
- Applicant Address: US ID Boise
- Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee Address: US ID Boise
- Main IPC: H01L29/82
- IPC: H01L29/82 ; G11B5/673 ; G11B5/65 ; H01L21/34 ; G11B5/66
Abstract:
Memory cells are disclosed. Magnetic regions within the memory cells include an alternating structure of magnetic sub-regions and coupler sub-regions. The coupler material of the coupler sub-regions antiferromagnetically couples neighboring magnetic sub-regions and effects or encourages a vertical magnetic orientation exhibited by the neighboring magnetic sub-regions. Neighboring magnetic sub-regions, spaced from one another by a coupler sub-region, exhibit oppositely-directed magnetic orientations. The magnetic and coupler sub-regions may each be of a thickness tailored to form the magnetic region in a compact structure. Interference between magnetic dipole fields emitted from the magnetic region on switching of a free region in the memory cell may be reduced or eliminated. Also disclosed are semiconductor device structures, spin torque transfer magnetic random access memory (STT-MRAM) systems, and methods of fabrication.
Public/Granted literature
- US09054030B2 Memory cells, semiconductor device structures, memory systems, and methods of fabrication Public/Granted day:2015-06-09
Information query
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