发明申请
- 专利标题: SEMICONDUCTOR DEVICE
- 专利标题(中): 半导体器件
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申请号: US13906771申请日: 2013-05-31
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公开(公告)号: US20130264696A1公开(公告)日: 2013-10-10
- 发明人: Ryoichi KAJIWARA , Masahiro KOIZUMI , Toshiaki MORITA , Kazuya TAKAHASHI , Munehisa KISHIMOTO , Shigeru ISHII , Toshinori HIRASHIMA , Yasushi TAKAHASHI , Toshiyuki HATA , Hiroshi SATO , Keiichi OOKAWA
- 申请人: Renesas Eastern Japan Semiconductor, Inc. , Renesas Electronics Corporation
- 优先权: JP11-19431 19990128; JP11-160539 19990608
- 主分类号: H01L23/495
- IPC分类号: H01L23/495
摘要:
A semiconductor device featuring a semiconductor chip including a MOSFET and having a first main surface and a second, opposing main surface, a source electrode pad and a gate electrode pad over the first main surface, a drain electrode over the second main surface, a source external terminal and a gate external terminal, each having a first main surface electrically connected to the source electrode pad and gate electrode pad of the chip, respectively, and a drain external terminal having a first main surface and a second, opposing main surface and being electrically connected to the second main surface of the chip, each of the source, gate and drain external terminals having second main surfaces thereof in a same plane, and, in a plan view of the external terminals, the gate external terminal has a portion located between the source and drain external terminals in at least one direction.
公开/授权文献
- US08816411B2 Mosfet package 公开/授权日:2014-08-26
信息查询
IPC分类: