发明申请
- 专利标题： Method For Detaching A Semiconductor Chip From A Foil
- 专利标题（中）： 从铝箔上分离半导体芯片的方法
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申请号： US13839586申请日： 2013-03-15
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公开(公告)号： US20130255889A1公开(公告)日： 2013-10-03
- 发明人: Ernst Barmettler , Fabian Hurschler , Brian Pulis
- 申请人： BESI SWITZERLAND AG
- 申请人地址： CH Cham
- 专利权人： Besi Switzerland AG
- 当前专利权人： Besi Switzerland AG
- 当前专利权人地址： CH Cham
- 优先权： CH453/12 20120330
- 主分类号： H01L21/67
- IPC分类号： H01L21/67
摘要：
A method for detaching a semiconductor chip from a foil uses a die ejector comprising plates having a straight supporting edge and an L-shaped supporting edge comprises: lifting of the plates to a height H1 above the surface of a cover plate; lowering of a first pair of plates with L-shaped supporting edge; optionally, lowering of a second pair of plates with L-shaped supporting edge; lifting of the plates that have not yet been lowered to a height H2>H1; staggered lowering of plates that have not yet been lowered, with at least one or several plates not being lowered; optionally, lowering of the plates that have not yet been lowered to a height H3
公开/授权文献
- US09039867B2 Method for detaching a semiconductor chip from a foil 公开/授权日：2015-05-26
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