Invention Application
US20130240963A1 STT-MRAM Reference Layer Having Substantially Reduced Stray Field and Consisting of a Single Magnetic Domain
有权
STT-MRAM参考层具有基本上减少的杂散场并且由单个磁畴组成
- Patent Title: STT-MRAM Reference Layer Having Substantially Reduced Stray Field and Consisting of a Single Magnetic Domain
- Patent Title (中): STT-MRAM参考层具有基本上减少的杂散场并且由单个磁畴组成
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Application No.: US13421963Application Date: 2012-03-16
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Publication No.: US20130240963A1Publication Date: 2013-09-19
- Inventor: Robert Beach , Guenole Jan , Yu-Jen Wang , Witold Kula , Po-Kang Wang
- Applicant: Robert Beach , Guenole Jan , Yu-Jen Wang , Witold Kula , Po-Kang Wang
- Applicant Address: US CA Milpitas
- Assignee: HEADWAY TECHNOLOGIES, INC.
- Current Assignee: HEADWAY TECHNOLOGIES, INC.
- Current Assignee Address: US CA Milpitas
- Main IPC: H01L29/82
- IPC: H01L29/82 ; H01L21/8239
Abstract:
An STT MTJ cell is formed with a magnetic anisotropy of its free and reference layers that is perpendicular to their planes of formation. The reference layer of the cell is an SAF multilayered structure with a single magnetic domain to enhance the bi-stability of the magnetoresistive states of the cell. The free layer of the cell is etched back laterally from the reference layer, so that the fringing stray field of the reference layer is no more than 15% of the coercivity of the free layer and has minimal effect on the free layer.
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