发明申请
- 专利标题： FABRICATION METHOD OF NITRIDE FORMING ON SILICON SUBSTRATE
- 专利标题（中）： 硅衬底上形成氮化物的制备方法
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申请号： US13442885申请日： 2012-04-10
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公开(公告)号： US20130217212A1公开(公告)日： 2013-08-22
- 发明人: Chih-Chung Yang , Chih-Yen Chen
- 申请人： Chih-Chung Yang , Chih-Yen Chen
- 申请人地址： TW Taipei
- 专利权人： NATIONAL TAIWAN UNIVERSITY
- 当前专利权人： NATIONAL TAIWAN UNIVERSITY
- 当前专利权人地址： TW Taipei
- 优先权： TW101105082 20120216
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
The invention is directed to a method for forming a nitride on a silicon substrate. In the method of the present invention, a silicon substrate is provided and a buffer layer is formed on the silicon substrate. The formation of the buffer layer includes a multi-level temperature modulation process having a plurality temperature levels and a plurality of temperature modulations. For each of the temperature modulations, the temperature is gradually decreased. A nitride is formed on the buffer layer.
公开/授权文献
- US09281184B2 Fabrication method of nitride forming on silicon substrate 公开/授权日：2016-03-08
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