Invention Application
- Patent Title: DIODE FOR ELECTROSTATIC PROTECTION
- Patent Title (中): 二极管用于静电保护
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Application No.: US13881227Application Date: 2011-10-13
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Publication No.: US20130207224A1Publication Date: 2013-08-15
- Inventor: Joon Young Park , Jong Hoon Park , Chang Kun Park
- Applicant: Joon Young Park , Jong Hoon Park , Chang Kun Park
- Applicant Address: KR Seoul
- Assignee: Soongsil University Research Consortium Techno-Par
- Current Assignee: Soongsil University Research Consortium Techno-Par
- Current Assignee Address: KR Seoul
- Priority: KR10-2010-0106350 20101028
- International Application: PCT/KR2011/007598 WO 20111013
- Main IPC: H01L27/02
- IPC: H01L27/02
Abstract:
Provided is an electrostatic discharge (ESD) protection diode that is formed on an input/output pad of an integrated circuit (IC), the ESD protection diode including: an N-type semiconductor that constitutes a first diode and is connected to a pad for a power supply voltage; a P-type semiconductor that constitutes the first diode and is connected to a signal line; an N-type semiconductor that constitutes a second diode and is connected to the signal line; a P-type semiconductor that constitutes the second diode and is connected to a pad for grounding; and a third diode that is formed by contacting the N-type semiconductor of the first diode and the P-type semiconductor of the second diode.
Public/Granted literature
- US08717724B2 Diode for electrostatic protection Public/Granted day:2014-05-06
Information query
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