Invention Application
- Patent Title: FERROMAGNETIC MATERIAL SPUTTERING TARGET
- Patent Title (中): FERROMAGNETIC MATERIAL SPUTTERING目标
-
Application No.: US13882233Application Date: 2011-12-15
-
Publication No.: US20130206593A1Publication Date: 2013-08-15
- Inventor: Atsutoshi Arakawa , Yuki Ikeda
- Applicant: Atsutoshi Arakawa , Yuki Ikeda
- Applicant Address: JP Tokyo
- Assignee: JX NIPPON MINING & METALS CORPORATION
- Current Assignee: JX NIPPON MINING & METALS CORPORATION
- Current Assignee Address: JP Tokyo
- Priority: JP2010-281728 20101217
- International Application: PCT/JP2011/079056 WO 20111215
- Main IPC: C23C14/34
- IPC: C23C14/34

Abstract:
Provided is a ferromagnetic material sputtering target comprising a metal having a composition that Cr is contained in an amount of 20 mol % or less, Ru is contained in an amount of 0.5 mol % or more and 30 mol % or less, and the remainder is Co, wherein the target has a structure including a base metal (A) and, within the base metal (A), a Co—Ru alloy phase (B) containing 35 mol % or more of Ru. The present invention provides a ferromagnetic material sputtering target that can improve leakage magnetic flux to allow stable discharge with a magnetron sputtering apparatus.
Information query
IPC分类: