Invention Application
- Patent Title: Reference Averaging for MRAM Sense Amplifiers
- Patent Title (中): MRAM检测放大器的参考平均
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Application No.: US13345116Application Date: 2012-01-06
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Publication No.: US20130176773A1Publication Date: 2013-07-11
- Inventor: Perng-Fei Yuh , Pokang Wang , Lejan Pu
- Applicant: Perng-Fei Yuh , Pokang Wang , Lejan Pu
- Applicant Address: US CA Milpitas
- Assignee: HEADWAY TECHNOLOGIES, INC.
- Current Assignee: HEADWAY TECHNOLOGIES, INC.
- Current Assignee Address: US CA Milpitas
- Main IPC: G11C11/02
- IPC: G11C11/02 ; G11C7/06

Abstract:
A sense amplifier comprising a reference current developed from a programmed and a non-programmed reference cell is used to read a signal from a magnetic random access memory (MRAM) comprising magnetic tunnel junction (MTJ) cells. The average current is determined from reference cells in as few as one sense amplifier and as many as n sense amplifiers, and is an average current between the programmed reference cell and the non-programmed reference cell that approximates the mid point between the two states. The sense amplifier can be fully differential or a non differential sense amplifier.
Public/Granted literature
- US08693273B2 Reference averaging for MRAM sense amplifiers Public/Granted day:2014-04-08
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