Invention Application
US20130175166A1 MAGNETRON SPUTTERING TARGET AND PROCESS FOR PRODUCING THE SAME
有权
MAGNETRON喷射目标及其生产方法
- Patent Title: MAGNETRON SPUTTERING TARGET AND PROCESS FOR PRODUCING THE SAME
- Patent Title (中): MAGNETRON喷射目标及其生产方法
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Application No.: US13813737Application Date: 2011-07-29
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Publication No.: US20130175166A1Publication Date: 2013-07-11
- Inventor: Takanobu Miyashita , Yasuyuki Goto
- Applicant: Takanobu Miyashita , Yasuyuki Goto
- Applicant Address: JP Tokyo
- Assignee: TANAKA KIKINZOKU KOGYO K.K.
- Current Assignee: TANAKA KIKINZOKU KOGYO K.K.
- Current Assignee Address: JP Tokyo
- Priority: JP2010-178199 20100806
- International Application: PCT/JP2011/067475 WO 20110729
- Main IPC: C23C14/34
- IPC: C23C14/34
Abstract:
A magnetron sputtering target containing a ferromagnetic metal element includes a magnetic phase containing the ferromagnetic metal element; a plurality of non-magnetic phases containing the ferromagnetic metal element, the plurality of non-magnetic phases containing a different constituent element from each other or containing constituent elements at different ratios from each other; and an oxide phase. Regions of the magnetic phase and the plurality of non-magnetic phases are separated from each other by the oxide phase.
Public/Granted literature
- US09053910B2 Magnetron sputtering target and process for producing the same Public/Granted day:2015-06-09
Information query
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