A plasma film deposition device includes a film deposition chamber, a plasma generator within the deposition chamber, a plurality of gas carrier boards adjustably mounted to the plasma generator, a gas providing system, and a rotating support bracket. The gas providing system provides working gas and protective gas. The rotating support bracket is assembled within the film deposition chamber, and is aligned with the plasma generator, for holding workpieces in certain orientations. The plasma generator ionizes the working gas into high-temperature plasma, and sprays the high-temperature plasma toward the rotating support bracket to form plasma films on the workpieces. A plasma jet area is defined between the rotating support bracket and the plasma generator, the gas carrier boards eject the protective gas toward the plasma jet area thereby adjusting the shape of the plasma jet area.