THERMAL MANAGEMENT OF EDGE RING IN SEMICONDUCTOR PROCESSING

Invention Application

US20130105088A1 THERMAL MANAGEMENT OF EDGE RING IN SEMICONDUCTOR PROCESSING 有权

Title translation: 半导体加工边缘管的热管理

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Patent Title: THERMAL MANAGEMENT OF EDGE RING IN SEMICONDUCTOR PROCESSING
Patent Title (中): 半导体加工边缘管的热管理
Application No.: US13646069

Application Date: 2012-10-05
Publication No.: US20130105088A1

Publication Date: 2013-05-02
Inventor: Aniruddha PAL , Martin Jeffrey SALINAS , Dmitry LUBOMIRSKY , Imad YOUSIF , Andrew NGUYEN
Applicant: APPLIED MATERIALS, INC.
Applicant Address: US CA Santa Clara
Assignee: APPLIED MATERIALS, INC.
Current Assignee: APPLIED MATERIALS, INC.
Current Assignee Address: US CA Santa Clara
Main IPC: H01L21/306
IPC: H01L21/306

THERMAL MANAGEMENT OF EDGE RING IN SEMICONDUCTOR PROCESSING

Abstract:

Apparatus for processing semiconductors are provided herein. In some embodiments, an apparatus for processing a substrate may include: a first ring disposed concentrically about a substrate support, the first ring configured to position a substrate atop the substrate support during processing; and a second ring disposed between the substrate support and the first ring, the second ring configured to provide a heat transfer path from the first ring to the substrate support.

Abstract(Chinese):

本文提供了半导体处理装置。在一些实施例中，用于处理衬底的装置可以包括：围绕衬底支撑件同心地设置的第一环，所述第一环被配置为在处理期间将衬底定位在衬底支撑件顶部; 以及设置在所述基板支撑件和所述第一环之间的第二环，所述第二环构造成提供从所述第一环到所述基板支撑件的传热路径。

Public/Granted literature

US09947559B2 Thermal management of edge ring in semiconductor processing Public/Granted day:2018-04-17

Information query

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/302	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/306	......化学或电处理，例如电解腐蚀（形成绝缘层的入H01L21/31；绝缘层的后处理入H01L21/3105）