知搜-全球专利检索

  1. 登录
  2. 注册
发明申请
US20130056752A1 SILICON CARBIDE SUBSTRATE, SILICON CARBIDE SUBSTRATE MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD 审中-公开
硅碳化硅基板，碳化硅基板制造方法和半导体器件制造方法

SILICON CARBIDE SUBSTRATE, SILICON CARBIDE SUBSTRATE MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
摘要：
An edge region has a width of 5 mm. A valid region is surrounded by the edge region, and has an area greater than or equal to 100 cm2. At the valid region, a micropipe having a cross-sectional area exceeding 1 μm2 is not present. The valid region includes a plurality of high-quality regions occupying 70% or more of the valid region. Each of the plurality of high-quality regions has a square shape, an area greater than or equal to 1 cm2, and a micropipe density less than or equal to 1 micropipe per 1 cm2.
摘要（中）：

边缘区域的宽度为5mm。 有效区域由边缘区域包围，并且具有大于或等于100cm 2的面积。 在有效区域，不存在横截面积超过1μm2的微管。 有效区域包括占有效区域的70％以上的多个高质量区域。 多个高质量区域中的每一个具有正方形形状，大于或等于1cm 2的面积，以及每1cm2小于或等于1个微管的微管密度。

信息查询
Global Dossier Espacenet
0/0