发明申请
- 专利标题： BIPOLAR JUNCTION TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
- 专利标题（中）： 双极接头晶体管及其制造方法
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申请号： US13345966申请日： 2012-01-09
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公开(公告)号： US20130049169A1公开(公告)日： 2013-02-28
- 发明人: JAE HYUN YOO , Jong Min Kim
- 申请人： JAE HYUN YOO , Jong Min Kim
- 优先权： KR10-2011-0086401 20110829
- 主分类号： H01L29/73
- IPC分类号： H01L29/73 ; H01L21/331
摘要：
A bipolar junction transistor includes a first trench element isolation film, a second trench element isolation film, a first base region, a second base region, a collector region, a first well, a second well, an emitter, a collector, and bases. The second well is formed by implanting an n-type impurity into the semiconductor substrate, and the emitter is formed by implanting the n-type impurity into the emitter region between the first trench element isolation film and the second well. The collector is formed by implanting the n-type impurity into the collector region between the first well and the second trench element isolation film, and the bases are formed by implanting the p-type impurity into the first base region and into the second base region between the emitter region and the second well.
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