Invention Application
- Patent Title: SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
- Patent Title (中): 半导体器件及其制造方法
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Application No.: US13553084Application Date: 2012-07-19
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Publication No.: US20130032942A1Publication Date: 2013-02-07
- Inventor: Kenichi Sasaki , Norio Fukasawa
- Applicant: Kenichi Sasaki , Norio Fukasawa
- Applicant Address: JP Yokohama-shi
- Assignee: FUJITSU SEMICONDUCTOR LIMITED
- Current Assignee: FUJITSU SEMICONDUCTOR LIMITED
- Current Assignee Address: JP Yokohama-shi
- Priority: JP2011-170422 20110803
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L23/48
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Abstract:
A semiconductor device includes a circuit substrate, a first semiconductor chip disposed on the circuit substrate, a plurality of first spacers disposed on the first semiconductor chip, a second semiconductor chip which includes a first adhesive agent layer on a lower face thereof and is disposed on upper portions of the plurality of spacers, a wire which connects the circuit substrate to the first semiconductor chip, and a first sealing material which seals a gap between the first semiconductor chip and the first adhesive agent layer, wherein each height of the plurality of the first spacers is greater than height of the wire relative to an upper face of the first semiconductor chip.
Public/Granted literature
- US08664775B2 Semiconductor device Public/Granted day:2014-03-04
Information query
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