发明申请
- 专利标题： SEMICONDUCTOR DEVICE HAVING CYLINDRICAL LOWER ELECTRODE OF CAPACITOR AND MANUFACTURING METHOD THEREOF
- 专利标题（中）： 具有电极的圆柱形电极的半导体器件及其制造方法
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申请号： US13366391申请日： 2012-02-06
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公开(公告)号： US20130032924A1公开(公告)日： 2013-02-07
- 发明人: SATORU ISOGAI , TAKAHIRO KUMAUCHI
- 申请人： SATORU ISOGAI , TAKAHIRO KUMAUCHI
- 申请人地址： JP TOKYO
- 专利权人： ELPIDA MEMORY, INC.
- 当前专利权人： ELPIDA MEMORY, INC.
- 当前专利权人地址： JP TOKYO
- 优先权： JP2008-328519 20081224
- 主分类号： H01L29/92
- IPC分类号： H01L29/92
摘要：
To provide a semiconductor device including: plural capacitors each including a cylindrical lower electrode having an internal wall and an external wall, and an upper electrode that covers the external wall of the lower electrode via a capacitance dielectric film; and a supporting film having a buried portion buried in an internal region surrounded by the internal wall of the lower electrode, and a supporting portion a part of which is positioned within the internal region and remaining parts of which are positioned at outside of the internal region. The supporting portion sandwiches an upper end of the lower electrode at both ends of the upper end by covering the internal wall and the external wall of the upper end of the lower electrode.
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