Invention Application
- Patent Title: SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING THE SAME, PHOTOVOLTAIC CELL ELEMENT, AND PHOTOVOLTAIC CELL
- Patent Title (中): 半导体基板及其制造方法，光电晶体元件和光电池
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Application No.: US13557188Application Date: 2012-07-24
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Publication No.: US20130025670A1Publication Date: 2013-01-31
- Inventor: Tetsuya SATO , Masato YOSHIDA , Takeshi NOJIRI , Yoichi MACHII , Mitsunori IWAMURO , Akihiro ORITA
- Applicant: Tetsuya SATO , Masato YOSHIDA , Takeshi NOJIRI , Yoichi MACHII , Mitsunori IWAMURO , Akihiro ORITA
- Assignee: HITACHI CHEMICAL COMPANY, LTD.
- Current Assignee: HITACHI CHEMICAL COMPANY, LTD.
- Priority: JP2011-162645 20110725; JP2011-162646 20110725; JP2011-162647 20110725
- Main IPC: H01L29/36
- IPC: H01L29/36 ; H01L21/22 ; H01L31/0224
Abstract:
The semiconductor substrate of the present invention contains a semiconductor layer and an impurity diffusion layer containing at least one impurity atom selected from the group consisting of an n-type impurity atom and a p-type impurity atom and at least one metallic atom selected from the group consisting of K, Na, Li, Ba, Sr, Ca, Mg, Be, Zn, Pb, Cd, V, Sn, Zr, Mo, La, Nb, Ta, Y, Ti, Ge, Te, and Lu.
Information query
IPC分类:
