发明申请
US20120329287A1 LOW k POROUS SiCOH DIELECTRIC AND INTEGRATION WITH POST FILM FORMATION TREATMENT
有权
低k多孔SiCOH电介质和后期成膜处理的整合
- 专利标题： LOW k POROUS SiCOH DIELECTRIC AND INTEGRATION WITH POST FILM FORMATION TREATMENT
- 专利标题（中）： 低k多孔SiCOH电介质和后期成膜处理的整合
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申请号： US13603008申请日： 2012-09-04
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公开(公告)号： US20120329287A1公开(公告)日： 2012-12-27
- 发明人: Stephen M. Gates , Alfred Grill , Son Nguyen , Satyanarayana V. Nitta , Thomas M. Shaw
- 申请人： Stephen M. Gates , Alfred Grill , Son Nguyen , Satyanarayana V. Nitta , Thomas M. Shaw
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L21/312
- IPC分类号： H01L21/312
摘要：
A porous SiCOH dielectric film in which the stress change caused by increased tetrahedral strain is minimized by post treatment in unsaturated Hydrocarbon ambient. The p-SiCOH dielectric film has more —(CHx) and less Si—O—H and Si—H bonding moieties. Moreover, a stable pSiOCH dielectric film is provided in which the amount of Si—OH (silanol) and Si—H groups at least within the pores has been reduced by about 90% or less by the post treatment. A p-SiCOH dielectric film is produced that is flexible since the pores include stabilized crosslinking —(CHx)— chains wherein x is 1, 2 or 3 therein. The dielectric film is produced utilizing an annealing step subsequent deposition that includes a gaseous ambient that includes at least one C—C double bond and/or at least one C—C triple bond.
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