Invention Application
- Patent Title: Metal Bump Formation
- Patent Title (中): 金属凸块形成
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Application No.: US13161303Application Date: 2011-06-15
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Publication No.: US20120322255A1Publication Date: 2012-12-20
- Inventor: Ming-Da Cheng , Chih-Wei Lin , Hsiu-Jen Lin , Tzong-Hann Yang , Wen-Hsiung Lu , Zheng-Yi Lim , Yi-Wen Wu , Chung-Shi Liu
- Applicant: Ming-Da Cheng , Chih-Wei Lin , Hsiu-Jen Lin , Tzong-Hann Yang , Wen-Hsiung Lu , Zheng-Yi Lim , Yi-Wen Wu , Chung-Shi Liu
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Main IPC: H01L21/768
- IPC: H01L21/768
Abstract:
A system and method for forming metal bumps is provided. An embodiment comprises attaching conductive material to a carrier medium and then contacting the conductive material to conductive regions of a substrate. Portions of the conductive material are then bonded to the conductive regions using a bonding process to form conductive caps on the conductive regions, and residual conductive material and the carrier medium are removed. A reflow process is used to reflow the conductive caps into conductive bumps.
Public/Granted literature
- US08501615B2 Metal bump formation Public/Granted day:2013-08-06
Information query
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