A MOSFET includes a silicon carbide substrate, a drift layer made of silicon carbide and including a main surface having an off angle of 50° or more and 65° or less with respect to a {0001} plane, and a gate oxide film formed on and in contact with the main surface of the drift layer. The drift layer includes a p type body region formed to include a region in contact with the gate oxide film. The p type body region has an impurity density of 5×1016 cm−3 or more. A plurality of p type regions of p conductivity type located apart from one another in a direction perpendicular to a thickness direction of the drift layer are arranged in a region in the drift layer lying between the p type body region and the silicon carbide substrate.