Invention Application
- Patent Title: SEMICONDUCTOR DEVEICE AND METHOD FOR MANUFACTURING THE SAME
- Patent Title (中): 半导体器件及其制造方法
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Application No.: US13522853Application Date: 2011-01-17
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Publication No.: US20120286412A1Publication Date: 2012-11-15
- Inventor: Akihiro Kimura , Tsunemori Yamaguchi
- Applicant: Akihiro Kimura , Tsunemori Yamaguchi
- Applicant Address: JP Kyoto-shi, Kyoto
- Assignee: ROHM CO., LTD.
- Current Assignee: ROHM CO., LTD.
- Current Assignee Address: JP Kyoto-shi, Kyoto
- Priority: JP2010-008183 20100118
- International Application: PCT/JP2011/050637 WO 20110117
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L21/78

Abstract:
A semiconductor device 100 includes a first insulating material 110 attached to a second main surface 106b of a semiconductor chip 106, and a second insulating material 112 attached to side surfaces of the semiconductor chip 106, the first insulating material 110 and an island 102. The semiconductor chip 106 is fixed to the island 102 via the first insulating material 110 and the second insulating material 112. The first insulating material 110 ensures a high dielectric strength between the semiconductor chip 106 and the island 102. Though the second insulating material 112 having a modulus of elasticity greater than that of the first insulating material 110, the semiconductor chip 106 is firmly attached to the island 102.
Public/Granted literature
- US08779569B2 Semiconductor device and method for manufacturing the same Public/Granted day:2014-07-15
Information query
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