A method for forming a device is disclosed. A support substrate having first and second major surfaces is provided. An interconnect is formed through the first and second major surfaces in the support substrate. The interconnect has first and second portions. The first portion extends from one of the first or second major surfaces and the second portion extends from the other of the first and second major surfaces. The interconnect includes a partial via plug having a conductive material in a first portion of the interconnect. The via plug has a bottom at about an interface of the first and second portions. The second portion of the interconnect is heavily doped with dopants of a first polarity type.