发明申请
US20120231945A1 CERAMIC MATERIAL, MEMBER FOR SEMICONDUCTOR MANUFACTURING EQUIPMENT, SPUTTERING TARGET MEMBER AND METHOD FOR PRODUCING CERAMIC MATERIAL 有权
陶瓷材料,半导体制造设备会员,飞溅目标会员及生产陶瓷材料的方法

CERAMIC MATERIAL, MEMBER FOR SEMICONDUCTOR MANUFACTURING EQUIPMENT, SPUTTERING TARGET MEMBER AND METHOD FOR PRODUCING CERAMIC MATERIAL
摘要:
A ceramic material according to the present invention mainly contains magnesium, aluminum, oxygen, and nitrogen, the ceramic material has the crystal phase of a MgO—AlN solid solution in which aluminum nitride is dissolved in magnesium oxide, the crystal phase serving as a main phase. Preferably, XRD peaks corresponding to the (200) and (220) planes of the MgO—AlN solid solution measured with CuKα radiation appear at 2θ=42.9 to 44.8° and 62.3 to 65.2°, respectively, the XRD peaks being located between peaks of cubic magnesium oxide and peaks of cubic aluminum nitride. More preferably, the XRD peak corresponding to the (111) plane appears at 2θ=36.9 to 39°, the XRD peak being located between a peak of cubic magnesium oxide and a peak of cubic aluminum nitride.
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