发明申请
- 专利标题: CERAMIC MATERIAL, MEMBER FOR SEMICONDUCTOR MANUFACTURING EQUIPMENT, SPUTTERING TARGET MEMBER AND METHOD FOR PRODUCING CERAMIC MATERIAL
- 专利标题(中): 陶瓷材料,半导体制造设备会员,飞溅目标会员及生产陶瓷材料的方法
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申请号: US13478591申请日: 2012-05-23
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公开(公告)号: US20120231945A1公开(公告)日: 2012-09-13
- 发明人: Morimichi WATANABE , Asumi Jindo , Yuji Katsuda , Yosuke Sato , Yoshinori Isoda
- 申请人: Morimichi WATANABE , Asumi Jindo , Yuji Katsuda , Yosuke Sato , Yoshinori Isoda
- 申请人地址: JP Nagoya-City
- 专利权人: NGK Insulators, Ltd.
- 当前专利权人: NGK Insulators, Ltd.
- 当前专利权人地址: JP Nagoya-City
- 优先权: JP2010-238999 20101025; JP2011-135313 20110617; JPPCT/JP2011/069491 20110829
- 主分类号: C04B35/04
- IPC分类号: C04B35/04 ; C23C14/06 ; C23C14/34 ; C04B35/645
摘要:
A ceramic material according to the present invention mainly contains magnesium, aluminum, oxygen, and nitrogen, the ceramic material has the crystal phase of a MgO—AlN solid solution in which aluminum nitride is dissolved in magnesium oxide, the crystal phase serving as a main phase. Preferably, XRD peaks corresponding to the (200) and (220) planes of the MgO—AlN solid solution measured with CuKα radiation appear at 2θ=42.9 to 44.8° and 62.3 to 65.2°, respectively, the XRD peaks being located between peaks of cubic magnesium oxide and peaks of cubic aluminum nitride. More preferably, the XRD peak corresponding to the (111) plane appears at 2θ=36.9 to 39°, the XRD peak being located between a peak of cubic magnesium oxide and a peak of cubic aluminum nitride.
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