发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- 专利标题（中）： 半导体器件及其制造方法
-
申请号： US13512456申请日： 2011-07-14
-
公开(公告)号： US20120228640A1公开(公告)日： 2012-09-13
- 发明人: Takeyoshi Masuda , Shin Harada , Misako Honaga , Keiji Wada , Toru Hiyoshi
- 申请人： Takeyoshi Masuda , Shin Harada , Misako Honaga , Keiji Wada , Toru Hiyoshi
- 申请人地址： JP Oaska-shi
- 专利权人： Sumitomo Electric Industries Ltd
- 当前专利权人： Sumitomo Electric Industries Ltd
- 当前专利权人地址： JP Oaska-shi
- 优先权： JP2010-174663 20100803
- 国际申请： PCT/JP2011/066063 WO 20110714
- 主分类号： H01L29/24
- IPC分类号： H01L29/24 ; H01L21/04
摘要：
There are provided a high-quality semiconductor device having stable characteristics and a method for manufacturing such a semiconductor device. The semiconductor device includes: a substrate having a main surface; and a silicon carbide layer formed on the main surface of the substrate and including a side surface inclined relative to the main surface. The side surface substantially includes a {03-3-8} plane. The side surface includes a channel region.
信息查询
IPC分类:
