发明申请
- 专利标题： ELECTROSTATIC DISCHARGE DEVICE CONTROL AND STRUCTURE
- 专利标题（中）： 静电放电装置的控制和结构
-
申请号： US12987276申请日： 2011-01-10
-
公开(公告)号： US20120176721A1公开(公告)日： 2012-07-12
- 发明人: Robert J. GAUTHIER, JR. , Junjun LI , Souvick MITRA
- 申请人： Robert J. GAUTHIER, JR. , Junjun LI , Souvick MITRA
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H05F3/02
- IPC分类号： H05F3/02
摘要：
Structures and methods for electrostatic discharge (ESD) device control in an integrated circuit are provided. An ESD protection structure includes an input/output (I/O) pad, and an ESD field effect transistor (FET) including a drain connected to the I/O pad, a source connected to ground, and a gate. A first control FET includes a drain connected to the I/O pad, a source connected to the gate of the ESD FET, and a gate connected to ground. A second control FET includes a drain connected to the gate of the ESD FET and the source of the first control FET, a source connected to ground, and a gate connected to the I/O pad.
公开/授权文献
- US08514535B2 Electrostatic discharge device control and structure 公开/授权日：2013-08-20
信息查询
