发明申请
US20120171803A1 REVERSE IMAGE SENSOR MODULE AND METHOD FOR MANUFACTURING THE SAME 有权
反向图像传感器模块及其制造方法

  • 专利标题: REVERSE IMAGE SENSOR MODULE AND METHOD FOR MANUFACTURING THE SAME
  • 专利标题(中): 反向图像传感器模块及其制造方法
  • 申请号: US13412821
    申请日: 2012-03-06
  • 公开(公告)号: US20120171803A1
    公开(公告)日: 2012-07-05
  • 发明人: Seung Taek YANG
  • 申请人: Seung Taek YANG
  • 申请人地址: KR Gyeonggi-do
  • 专利权人: HYNIX SEMICONDUCTOR INC.
  • 当前专利权人: HYNIX SEMICONDUCTOR INC.
  • 当前专利权人地址: KR Gyeonggi-do
  • 优先权: KR10-2009-0112629 20091120
  • 主分类号: H01L31/18
  • IPC分类号: H01L31/18
REVERSE IMAGE SENSOR MODULE AND METHOD FOR MANUFACTURING THE SAME
摘要:
A reverse image sensor module includes first and second semiconductor chips, and first and second insulation layers. The first semiconductor chip includes a first semiconductor chip body having a first surface and a second surface facing away from the first surface, photodiodes disposed on the first surface, and a wiring layer disposed on the second surface and having wiring lines electrically connected to the photodiodes and bonding pads electrically connected to the wiring lines. The second semiconductor chip includes a second semiconductor chip body having a third surface facing the wiring layer, and through-electrodes electrically connected to the bonding pads and passing through the second semiconductor chip body. The first insulation layer is disposed on the wiring layer, and the second insulation layer is disposed on the third surface of the second semiconductor chip body facing the first insulation layer and is joined to the first insulation layer.
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