发明申请
- 专利标题： EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING EPITAXIAL SUBSTRATE
- 专利标题（中）： 外延基板和制造外延基板的方法
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申请号： US13414104申请日： 2012-03-07
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公开(公告)号： US20120161152A1公开(公告)日： 2012-06-28
- 发明人: Makoto MIYOSHI , Shigeaki Sumiya , Mikiya Ichimura , Sota Maehara , Mitsuhiro Tanaka
- 申请人： Makoto MIYOSHI , Shigeaki Sumiya , Mikiya Ichimura , Sota Maehara , Mitsuhiro Tanaka
- 申请人地址： JP Nagoya-Shi
- 专利权人： NGK Insulators, Ltd.
- 当前专利权人： NGK Insulators, Ltd.
- 当前专利权人地址： JP Nagoya-Shi
- 优先权： JP2010-031281 20100216; JP2010-131019 20100608
- 主分类号： H01L29/205
- IPC分类号： H01L29/205 ; H01L21/20 ; H01L29/04
摘要：
Provided is a crack-free epitaxial substrate having a small amount of warping, in which a silicon substrate is used as a base substrate. The epitaxial substrate includes a (111) single crystal Si substrate, a buffer layer, and a crystal layer. The buffer layer is formed of a first lamination unit and a second lamination unit being alternately laminated. The first lamination unit includes a composition modulation layer and a first intermediate layer. The composition modulation layer is formed of a first unit layer and a second unit layer having different compositions being alternately and repeatedly laminated so that a compressive strain exists therein. The first intermediate layer enhances the compressive strain existing in the composition modulation layer. The second lamination unit is a second intermediate layer that is substantially strain-free.
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