发明申请
- 专利标题： DUAL USE TRANSISTOR
- 专利标题（中）： 双用途晶体管
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申请号： US13387311申请日： 2010-07-16
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公开(公告)号： US20120139644A1公开(公告)日： 2012-06-07
- 发明人: Sever Cercelaru
- 申请人： Sever Cercelaru
- 申请人地址： GB Cambridge
- 专利权人： Cambridge Silicon Radio Limited
- 当前专利权人： Cambridge Silicon Radio Limited
- 当前专利权人地址： GB Cambridge
- 优先权： GB0913445.3 20090731
- 国际申请： PCT/EP2010/060358 WO 20100716
- 主分类号： H03F3/16
- IPC分类号： H03F3/16
摘要：
A circuit for amplifying radio frequency signals comprising: a terminal for connection to an antenna; a common amplifier arranged in a common-gate configuration between a first node and said terminal; a transmit amplifier operable to amplify a radio frequency signal present at an input node and provide the amplified signal to said first node; and a receive amplifier operable to amplify a radio frequency signal present at said first node and provide the amplified signal to an output node; wherein the circuit is operable in two modes: in a receive mode, the common and receive amplifiers being configured so as to together form a receive cascode for amplifying radio frequency signals received at the terminal; and in a transmit mode, the common and transmit amplifiers being configured so as to together form a transmit cascode for amplifying radio frequency signals applied at the input node.
公开/授权文献
- US08989679B2 Dual use transistor 公开/授权日：2015-03-24
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