发明申请
- 专利标题: BONDING WIRE FOR SEMICONDUCTOR DEVICE
- 专利标题(中): 用于半导体器件的接合线
-
申请号: US13349155申请日: 2012-01-12
-
公开(公告)号: US20120104613A1公开(公告)日: 2012-05-03
- 发明人: Tomohiro Uno , Keiichi Kimura , Shinichi Terashima , Takashi Yamada , Akihito Nishibayashi
- 申请人: Tomohiro Uno , Keiichi Kimura , Shinichi Terashima , Takashi Yamada , Akihito Nishibayashi
- 申请人地址: JP Saitama JP TOKYO
- 专利权人: NIPPON MICROMETAL CORPORATION,NIPPON STEEL MATERIALS CO., LTD.
- 当前专利权人: NIPPON MICROMETAL CORPORATION,NIPPON STEEL MATERIALS CO., LTD.
- 当前专利权人地址: JP Saitama JP TOKYO
- 优先权: JP2007-192193 20070724
- 主分类号: H01L23/532
- IPC分类号: H01L23/532
摘要:
It is an object of the present invention to provide a copper-based bonding wire whose material cost is low, having excellent ball bondability, reliability in a heat cycle test or reflow test, and storage life, enabling an application to thinning of a wire used for fine pitch connection. The bonding wire includes a core material having copper as a main component and an outer layer which is provided on the core material and contains a metal M and copper, in which the metal M differs from the core material in one or both of components and composition. The outer layer is 0.021 to 0.12 μm in thickness.
公开/授权文献
- US09112059B2 Bonding wire for semiconductor device 公开/授权日:2015-08-18
信息查询
IPC分类: