发明申请
US20120040293A1 REFLECTIVE MASK, MANUFACTURING METHOD FOR REFLECTIVE MASK, AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE
审中-公开
反射掩模，反射掩模的制造方法和半导体器件的制造方法
- 专利标题： REFLECTIVE MASK, MANUFACTURING METHOD FOR REFLECTIVE MASK, AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE
- 专利标题（中）： 反射掩模，反射掩模的制造方法和半导体器件的制造方法
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申请号： US13282497申请日： 2011-10-27
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公开(公告)号： US20120040293A1公开(公告)日： 2012-02-16
- 发明人: Ryoichi Inanami , Yumi Nakajima , Masamitsu Itoh
- 申请人： Ryoichi Inanami , Yumi Nakajima , Masamitsu Itoh
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 优先权： JP2008-193131 20080728
- 主分类号： G03F7/20
- IPC分类号： G03F7/20 ; B82Y40/00
摘要：
A reflective mask comprising: a reflective layer that is arranged on a surface on a side on which EUV light is irradiated and reflects the EUV light; a buffer layer containing Cr that is arranged on a side of the reflective layer on which the EUV light is irradiated and covers an entire surface of the reflective layer; and a non-reflective layer that is arranged on a side of the buffer layer on which the EUV light is irradiated and in which an absorber that absorbs the irradiated EUV light is arranged in a position corresponding to a mask pattern to be reduced and transferred onto a wafer.
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