发明申请
- 专利标题： METHOD OF FABRICATING BUMP STRUCTURE
- 专利标题（中）： 制作BUMP结构的方法
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申请号： US12778610申请日： 2010-05-12
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公开(公告)号： US20110278716A1公开(公告)日： 2011-11-17
- 发明人: Chun-Lei HSU , Ming-Che HO , Ming-Da CHENG , Chung-Shi LIU
- 申请人： Chun-Lei HSU , Ming-Che HO , Ming-Da CHENG , Chung-Shi LIU
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsinchu
- 主分类号： H01L23/485
- IPC分类号： H01L23/485 ; H01L21/60
摘要：
A method for fabricating bump structure forms an under-bump metallurgy (UBM) layer in an opening of an encapsulating layer, and then forms a bump layer on the UBM layer within the opening of the encapsulating layer. After removing excess material of the bump layer from the upper surface of the encapsulating layer, the encapsulating layer is removed till a top portion of the bump layer protrudes from the upper surface of the encapsulating layer.
公开/授权文献
- US08993431B2 Method of fabricating bump structure 公开/授权日：2015-03-31
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