Invention Application
- Patent Title: NITRIDE SEMICONDUCTOR LASER DEVICE
- Patent Title (中): 氮化物半导体激光器件
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Application No.: US12681981Application Date: 2009-10-21
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Publication No.: US20110268144A1Publication Date: 2011-11-03
- Inventor: Kazutoshi Onozawa , Satoshi Tamura , Hideki Kasugai
- Applicant: Kazutoshi Onozawa , Satoshi Tamura , Hideki Kasugai
- Priority: JP2009-058647 20090311
- International Application: PCT/JP2009/005510 WO 20091021
- Main IPC: H01S5/323
- IPC: H01S5/323 ; H01S5/00
Abstract:
A nitride semiconductor laser device includes an active layer 106 made of a nitride semiconductor formed on a substrate and a current confining layer 109 formed above the active layer 106. The current confining layer has an opening 109a through which a current selectively flows into the active layer 106. The device satisfies 0.044
Information query
