发明申请
- 专利标题： PHOTORESISTS AND METHODS FOR USE THEREOF
- 专利标题（中）： 光电及其使用方法
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申请号： US12969319申请日： 2010-12-15
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公开(公告)号： US20110254133A1公开(公告)日： 2011-10-20
- 发明人: Gerhard POHLERS
- 申请人： Gerhard POHLERS
- 申请人地址： US MA Marlborough
- 专利权人： Rohm and Haas Electronic Materials LLC
- 当前专利权人： Rohm and Haas Electronic Materials LLC
- 当前专利权人地址： US MA Marlborough
- 主分类号： H01L29/36
- IPC分类号： H01L29/36 ; G03F7/004 ; H01L21/425 ; G03F7/20
摘要：
New photoresist are provided that comprises an Si-containing component and that are particularly useful for ion implant lithography applications. Photoresists of the invention can exhibit good adhesion to underlying inorganic surfaces such as SiON, silicon oxide, silicon nitride and other inorganic surfaces.
公开/授权文献
- US09665001B2 Photoresists and methods for use thereof 公开/授权日：2017-05-30
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