Invention Application
- Patent Title: THERMALLY ASSISTED MULTI-BIT MRAM
- Patent Title (中): 热辅助多位MRAM
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Application No.: US13160969Application Date: 2011-06-15
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Publication No.: US20110242883A1Publication Date: 2011-10-06
- Inventor: Yuankai Zheng , Dimitar V. Dimitrov , Haiwen Xi
- Applicant: Yuankai Zheng , Dimitar V. Dimitrov , Haiwen Xi
- Applicant Address: US CA Scotts Valley
- Assignee: SEAGATE TECHNOLOGY LLC
- Current Assignee: SEAGATE TECHNOLOGY LLC
- Current Assignee Address: US CA Scotts Valley
- Main IPC: G11C11/15
- IPC: G11C11/15
Abstract:
Methods of writing to a multi-bit MRAM memory unit are described. The method includes to self-detected writing to a multi-bit (i.e., multilevel) thermally assisted MRAM. The self-detected writing increases a reading margin between data state levels and decreases reading margin variability due to cell resistance variation.
Public/Granted literature
- US08199564B2 Thermally assisted multi-bit MRAM Public/Granted day:2012-06-12
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