Invention Application
US20110212577A1 SEMICONDUCTOR POWER DEVICE HAVING A STACKED DISCRETE INDUCTOR STRUCTURE 审中-公开
具有堆叠式离子电感结构的半导体功率器件

  • Patent Title: SEMICONDUCTOR POWER DEVICE HAVING A STACKED DISCRETE INDUCTOR STRUCTURE
  • Patent Title (中): 具有堆叠式离子电感结构的半导体功率器件
  • Application No.: US12868735
    Application Date: 2010-08-26
  • Publication No.: US20110212577A1
    Publication Date: 2011-09-01
  • Inventor: François Hébert
  • Applicant: François Hébert
  • Main IPC: H01L21/58
  • IPC: H01L21/58 H01L21/60
SEMICONDUCTOR POWER DEVICE HAVING A STACKED DISCRETE INDUCTOR STRUCTURE
Abstract:
A power device includes a discrete inductor having contacts formed on a first surface of the discrete inductor and at least one semiconductor component mounted on the first surface of the discrete inductor and coupled to the contacts. The discrete inductor further includes contacts formed on a second surface opposite the first surface and routing connections connecting the first surface contacts to corresponding second surface contacts. The semiconductor components may be flip chip mounted onto the discrete inductor contacts or wire bonded thereto.
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