发明申请
- 专利标题： THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND DISPLAY UNIT
- 专利标题（中）： 薄膜晶体管，其制造方法和显示单元
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申请号： US13014363申请日： 2011-01-26
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公开(公告)号： US20110186853A1公开(公告)日： 2011-08-04
- 发明人: Yasuhiro Terai , Eri Fukumoto , Toshiaki Arai , Narihiro Morosawa
- 申请人： Yasuhiro Terai , Eri Fukumoto , Toshiaki Arai , Narihiro Morosawa
- 申请人地址： JP Tokyo
- 专利权人： SONY CORPORATION
- 当前专利权人： SONY CORPORATION
- 当前专利权人地址： JP Tokyo
- 优先权： JPP2010-022160 20100203
- 主分类号： H01L29/12
- IPC分类号： H01L29/12 ; H01L21/336
摘要：
A thin film transistor is provided. The thin film transistor includes a gate electrode, a gate insulating film, and an oxide semiconductor film, wherein at least a portion of the gate electrode includes a metal oxide. An electric device and a display device that include the thin film transistor are also provided in addition to a manufacture method.
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