Invention Application
- Patent Title: THROUGH SILICON VIA LITHOGRAPHIC ALIGNMENT AND REGISTRATION
- Patent Title (中): 通过硅胶通过光刻对准和注册
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Application No.: US12690299Application Date: 2010-01-20
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Publication No.: US20110177670A1Publication Date: 2011-07-21
- Inventor: Russell T. Herrin , Peter J. Lindgren , Edmund J. Sprogis , Anthony K. Stamper
- Applicant: Russell T. Herrin , Peter J. Lindgren , Edmund J. Sprogis , Anthony K. Stamper
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporaton
- Current Assignee: International Business Machines Corporaton
- Current Assignee Address: US NY Armonk
- Main IPC: H01L21/71
- IPC: H01L21/71
Abstract:
A method of manufacturing an integrated circuit structure forms a first opening in a substrate and lines the first opening with a protective liner. The method deposits a material into the first opening and forms a protective material over the substrate. The protective material includes a process control mark and includes a second opening above, and aligned with, the first opening. The method removes the material from the first opening through the second opening in the protective material. The process control mark comprises a recess within the protective material that extends only partially through the protective material, such that portions of the substrate below the process control mark are not affected by the process of removing the material.
Public/Granted literature
- US08039356B2 Through silicon via lithographic alignment and registration Public/Granted day:2011-10-18
Information query
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