发明申请
- 专利标题： THROUGH SILICON VIA LITHOGRAPHIC ALIGNMENT AND REGISTRATION
- 专利标题（中）： 通过硅胶通过光刻对准和注册
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申请号： US12690299申请日： 2010-01-20
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公开(公告)号： US20110177670A1公开(公告)日： 2011-07-21
- 发明人: Russell T. Herrin , Peter J. Lindgren , Edmund J. Sprogis , Anthony K. Stamper
- 申请人： Russell T. Herrin , Peter J. Lindgren , Edmund J. Sprogis , Anthony K. Stamper
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporaton
- 当前专利权人： International Business Machines Corporaton
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L21/71
- IPC分类号： H01L21/71
摘要：
A method of manufacturing an integrated circuit structure forms a first opening in a substrate and lines the first opening with a protective liner. The method deposits a material into the first opening and forms a protective material over the substrate. The protective material includes a process control mark and includes a second opening above, and aligned with, the first opening. The method removes the material from the first opening through the second opening in the protective material. The process control mark comprises a recess within the protective material that extends only partially through the protective material, such that portions of the substrate below the process control mark are not affected by the process of removing the material.
公开/授权文献
- US08039356B2 Through silicon via lithographic alignment and registration 公开/授权日：2011-10-18
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