发明申请
US20110121321A1 SEMICONDUCTOR LIGHT EMITTING DEVICE MEMBER, METHOD FOR MANUFACTURING SUCH SEMICONDUCTOR LIGHT EMITTING DEVICE MEMBER AND SEMICONDUCTOR LIGHT EMITTING DEVICE USING SUCH SEMICONDUCTOR LIGHT EMITTING DEVICE MEMBER 有权
半导体发光器件组件,用于制造这样的半导体发光器件组件的方法和使用这种半导体发光器件组件的半导体发光器件

  • 专利标题: SEMICONDUCTOR LIGHT EMITTING DEVICE MEMBER, METHOD FOR MANUFACTURING SUCH SEMICONDUCTOR LIGHT EMITTING DEVICE MEMBER AND SEMICONDUCTOR LIGHT EMITTING DEVICE USING SUCH SEMICONDUCTOR LIGHT EMITTING DEVICE MEMBER
  • 专利标题(中): 半导体发光器件组件,用于制造这样的半导体发光器件组件的方法和使用这种半导体发光器件组件的半导体发光器件
  • 申请号: US12950128
    申请日: 2010-11-19
  • 公开(公告)号: US20110121321A1
    公开(公告)日: 2011-05-26
  • 发明人: Hanako KatoYutaka MoriHiroshi KobayashiTsubasa Tomura
  • 申请人: Hanako KatoYutaka MoriHiroshi KobayashiTsubasa Tomura
  • 申请人地址: JP Minato-ku
  • 专利权人: MITSUBISHI CHEMICAL CORPORATION
  • 当前专利权人: MITSUBISHI CHEMICAL CORPORATION
  • 当前专利权人地址: JP Minato-ku
  • 优先权: JP2005-047742 20050223; JP2005-086305 20050324; JP2005-165921 20050606; JP2005-276754 20050922; JP2005-276755 20050922; JP2005-276783 20050922
  • 主分类号: H01L33/52
  • IPC分类号: H01L33/52
SEMICONDUCTOR LIGHT EMITTING DEVICE MEMBER, METHOD FOR MANUFACTURING SUCH SEMICONDUCTOR LIGHT EMITTING DEVICE MEMBER AND SEMICONDUCTOR LIGHT EMITTING DEVICE USING SUCH SEMICONDUCTOR LIGHT EMITTING DEVICE MEMBER
摘要:
A semiconductor light-emitting device member excellent in transparency, light resistance, and heat resistance and capable of sealing a semiconductor light-emitting device without causing cracks and peeling even after a long-time use is provided wherein the semiconductor light-emitting device member contains (A) in a solid state Si-nuclear magnetic resonance spectrum, at least one peak selected from (a) peaks whose peak top position is in an area of a chemical shift of −40 ppm to 0 ppm inclusive, and whose full width at half maximum is 0.3 ppm to 3.0 ppm inclusive, and (b) peaks whose peak top position is in an area of the chemical shift of −80 ppm or more and less than −40 ppm, and whose full width at half maximum is 0.3 ppm to 5.0 ppm inclusive, wherein (B) silicon content is 20 weight % or more and (C) silanol content is 0.1 weight % to 10 weight % inclusive.
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