发明申请
US20110108887A1 MULTILAYER BARRIER III-NITRIDE TRANSISTOR FOR HIGH VOLTAGE ELECTRONICS
有权
用于高压电子的多层氮化物III-NITRIDE晶体管
- 专利标题： MULTILAYER BARRIER III-NITRIDE TRANSISTOR FOR HIGH VOLTAGE ELECTRONICS
- 专利标题（中）： 用于高压电子的多层氮化物III-NITRIDE晶体管
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申请号： US12941332申请日： 2010-11-08
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公开(公告)号： US20110108887A1公开(公告)日： 2011-05-12
- 发明人: Qhalid Fareed , Vinod Adivarahan , Asif Khan
- 申请人： Qhalid Fareed , Vinod Adivarahan , Asif Khan
- 专利权人： Nitek, Inc.
- 当前专利权人： Nitek, Inc.
- 主分类号： H01L29/778
- IPC分类号： H01L29/778 ; H01L21/335
摘要：
An improved high breakdown voltage semiconductor device and method for manufacturing is provided. The device has a substrate and a AlaGa1-aN layer on the substrate wherein 0.1≦a≦1.00. A GaN layer is on the AlaGa1-aN layer. An In1-bGabN/GaN channel layer is on the GaN layer wherein 0.1≦b≦1.00. A AlcIndGa1-c-dN spacer layer is on the In1-bGabN/GaN layer wherein 0.1≦c≦1.00 and 0.0≦d≦0.99. A AleIn1-eN nested superlattice barrier layer is on the AlcIndGa1-c-dN spacer layer wherein 0.10≦e≦0.99. A AlfIngGa1-f-gN leakage suppression layer is on the AleIn1-eN barrier layer wherein 0.1≦f≦0.99 and 0.1≦g≦0.99 wherein the leakage suppression layer decreases leakage current and increases breakdown voltage during high voltage operation. A superstructure, preferably with metallic electrodes, is on the AlfIngGa1-f-gN leakage suppression layer.
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